| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10364783 | Microelectronic Engineering | 2005 | 6 Pages |
Abstract
We present the process integration of the Pr-based high-k oxides Pr2O3, PrTixOy and PrxSiyOz for CMOS devices. MOS structures were grown in form of p+ poly-Si/Pr-based dielectric/Si(100) by MBE. RIE with CF4/O2 plasma was used to selectively remove the poly-Si layer. It was found that the Pr-based oxides layers can be dissolved with high selectivity in diluted H2SO4 solutions. Details of the etch kinetics of Pr-based oxides and poly-Si were studied. Electrical characteristics of MOS stacks with integrated PrxSiyOz are presented.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
A.U. Mane, Ch. Wenger, G. Lupina, T. Schroeder, G. Lippert, R. Sorge, P. Zaumseil, G. Weidner, J. Dabrowski, H.-J. Müssig,