Article ID Journal Published Year Pages File Type
10364785 Microelectronic Engineering 2005 7 Pages PDF
Abstract
Phase-change nonvolatile memory cell elements composed of Sb2Te3 chalcogenide have been fabricated by using the focused ion beam method. The contact size between the Sb2Te3 phase change film and electrode film in the cell element is 2826 nm2 (diameter: 60 nm). The thickness of the Sb2Te3 chalcogenide film is 40 nm. The threshold switching current of about 0.1 mA was obtained. A RESET pulse width as short as 5 ns and the SET pulse width as short as 22 ns for Sb2Te3 chalcogenide can be obtained. At least 1000 cycle times with a RESET/SET resistance ratio >30 times is achieved for Sb2Te3 chalcogenide C-RAM cell element.
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Physical Sciences and Engineering Computer Science Hardware and Architecture
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