Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10364785 | Microelectronic Engineering | 2005 | 7 Pages |
Abstract
Phase-change nonvolatile memory cell elements composed of Sb2Te3 chalcogenide have been fabricated by using the focused ion beam method. The contact size between the Sb2Te3 phase change film and electrode film in the cell element is 2826Â nm2 (diameter: 60Â nm). The thickness of the Sb2Te3 chalcogenide film is 40Â nm. The threshold switching current of about 0.1Â mA was obtained. A RESET pulse width as short as 5Â ns and the SET pulse width as short as 22Â ns for Sb2Te3 chalcogenide can be obtained. At least 1000 cycle times with a RESET/SET resistance ratio >30 times is achieved for Sb2Te3 chalcogenide C-RAM cell element.
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Authors
Bo Liu, Zhitang Song, Songlin Feng, Bomy Chen,