Ferroelectric and leakage current characteristics of (Pb0.72La0.28)Ti0.93O3 thin films prepared by a sol-gel process

(Pb1 − xLax)Ti1 − x/4O3(x = 28 mol%, denoted as PLT) thin films were grown on Pt/Ti/SiO2/Si substrates by using a sol-gel process. The Pt/PLT/Pt film capacitor showed well-saturated hysteresis loops at an applied electric field of 500 kV/cm with spontaneous polarization (Ps), remanent polarization (Pr) and coercive electric field (Ec) values of 9.23 μC/cm2, 0.53 μC/cm2 and 19.7 kV/cm, respectively. At 100 kHz, the dielectric constant and dissipation factor of the film were 748 and 0.026, respectively. The leakage current density is lower than 1.0 × 10−7 A/cm2over the electric field range of 0 to 200 kV/cm. And the Pt/PLT interface exist a Schottky emission characteristics.