| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10364804 | Microelectronic Engineering | 2005 | 6 Pages |
Abstract
In this paper, we demonstrate that the current gain of SiC power bipolar transistors can be improved by as large as 100% by using a novel surface accumulation layer transistor concept in which a reflecting boundary in the emitter reduces the base current. The reasons for the improved current gain are explained based on simulation results.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M. Jagadesh Kumar, Vinod Parihar,