Series resistance calculation for Ag contacts on single crystal layered p-SnS and p-SnSe compound semiconductors in the wide temperature range

This paper summarizes the first results of characteristics parameters obtained from current-voltage (I-V) measurements for Ag/p-SnS and Ag/p-SnSe structure. The reverse and forward bias current-voltage characteristics of Ag Schottky contacts on a Bridgman-Stockbarger grown p-SnS and p-SnSe layered semiconducting material have been measured at various temperatures. We have tried to determine contact properties such as apparent barrier heights ΦB0, ideality factor n and series resistance Rs. The apparent barrier height and ideality factor calculated by using thermionic emission theory were found to be strongly temperature dependent. Evaluating forward I-V data reveals a decrease at the apparent barrier height, but an increase at the ideality factor with decrease in temperature. It is shown that the values of Rs estimated from Cheung's method were strongly temperature dependent and decreased with increasing temperature. It has been found that both contacts are of Schottky type.