Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10364811 | Microelectronic Engineering | 2005 | 6 Pages |
Abstract
This paper presents the first results of a practical SOI LDMOSFET in patterned SOI substrate that has been successfully prepared by masked SIMOX method. The device exhibits good electrical performance including a leakage current of 20Â nA, the flat output characteristic curves, a cutoff frequency up to 8Â GHz, and a voltage gain of 2.5Â dB at 2Â GHz. The proposed technology not only suppresses floating body effects effectively but also preserves SOI technology's advantage of low power assumption. Moreover, the process is compatible with conventional SOI technology.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Xinhong Cheng, Zhaorui Song, Yemin Dong, Yuehui Yu, DaShen Shen,