Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10364812 | Microelectronic Engineering | 2005 | 6 Pages |
Abstract
Carbon hard mask structures have been used to etch a variety of materials typically used in sub 90Â nm DRAM manufacture. The results indicate that carbon hard masks can be used very effectively to structure oxide, nitride and metal films giving the CD performance required for the technologies being investigated.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Kevin A. Pears, Momtchil Stavrev, Alessia Scire, Ralf Koepe, Matthias Markert, Ulrich Egger, Lee Donohue,