| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4970805 | Microelectronic Engineering | 2017 | 5 Pages |
Abstract
The figure shows normal distribution of the OFF-current before and after breakdown in 28Â nm FDSOI transistors, where Rg play an important role by controlling the gate current leakage after breakdown.343
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Amer Diab, Xavier Garros, Mustapha Rafik, Xavier Federspiel, Emmanuel Vincent, Gilles Reimbold,