Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
4970806 | Microelectronic Engineering | 2017 | 8 Pages |
Abstract
A new model to account for variability in resistive memories is presented. It is included in a previous general current model that considers the main physical mechanisms involved in the conductive filament formation and disruption processes that lead to different resistive states. The validity of the model has been proved for different technologies of metal-insulator-metal bipolar resistive memories. The model can be implemented in Verilog-A for circuit simulation purposes.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
G. González-Cordero, M.B. González, H. GarcÃa, F. Campabadal, S. Dueñas, H. Castán, F. Jiménez-Molinos, J.B. Roldán,