| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4970829 | Microelectronic Engineering | 2017 | 9 Pages |
Abstract
Hall Effect measurement is carried out on an epitaxial GaN wafer. Van Der Pauw like structure is “hand-insulated” with a diamond probe and used to perform this experiment. Good linearity of VH and a constant value of Ns,Hall versus the injected current is obtained. This figure proves the feasibility of our methodology on partially (without any patterning nor metallization) processed GaN wafers.85
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Authors
Iliass Nifa, Charles Leroux, Alphonse Torres, Matthew Charles, Denis Blachier, Gilles Reimbold, Gérard Ghibaudo, Edwige Bano,