| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 4970836 | Microelectronic Engineering | 2017 | 14 Pages |
Abstract
DLTS spectra recorded before and after a negative voltage stress (â 600 V) highlight a modification in trapping properties of AlGaN/GaN Schottky barrier diodes.133
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Authors
Philippe Ferrandis, Matthew Charles, Charlotte Gillot, René Escoffier, Erwan Morvan, Alphonse Torres, Gilles Reimbold,