| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 538865 | Microelectronic Engineering | 2016 | 13 Pages |
•The latest advances in the monolithic 3D integration of the NAND Flash memory are surveyed.•The key technical challenges and important aspects of various designs are highlighted.•The mechanisms that overcome the technical barriers are discussed.•By comparing different designs, the most promising solutions are marked.•Future prospects and expected market demand of NAND Flash memory are explained.
Flash memory industry has showed remarkable steady progress during the last few years. This achievement is owed to the development of the 3D NAND Flash structures. This paper reviews the latest advances in the monolithic 3D integration of the NAND Flash memory. It highlights key technical challenges and uses important aspects and characteristics of various designs in order to illustrate mechanisms that overcome the technical barriers. Furthermore, the most promising solutions are marked by comparing advantages and disadvantages of different designs. Finally, future prospects and expected market demand of NAND Flash memory are addressed.
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