| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 538931 | Microelectronic Engineering | 2016 | 5 Pages |
•A ferroelectric multi-bit memory device with two thicknesses was fabricated.•Two thicknesses were realized by spin-coating of solubility-controlled solution.•EFM and polarization-voltage curves show 4 states and low-voltage operation.
Ferroelectric multi-bit storage memory which is fabricated by means of the patterning and double-coating of ferroelectric polymer film is demonstrated. The multi-bit memory device demonstrated here has two thicknesses in a capacitor. Therefore, ferroelectric switching at each thickness arises in different voltage range. The structured capacitor with two different thicknesses is realized by optimizing two processes, i.e., the photo-lithographical patterning of the ferroelectric film and a double-coating method for the formation of the multilayer structure. Not only photo-lithographical patterning but also the double-coating method of ferroelectric film was performed with a solubility-controlled ferroelectric polymer solution created by the addition of an insoluble solvent. From electrostatic force microscopy and displacement-voltage measurements, the fabricated multi-bit storage memory operated as predicted for a multi-bit memory scheme. The solubility-controlling method suggested here will offer additional promising routes to fabricate complex organic devices based on a solution process.
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