Selected problems in IR and UV laser micromachining of Si and GaAs in submillimeter scale

•UV and IR laser micromachining with different duration of laser pulses (nano- and femto-second)•Various semiconductor materials under investigation — Si and GaAs•Effects of micromachining with good accordance with modeling

Results of laser micromachining of silicon and gallium arsenide in submillimeter scale were compared. Studies were performed using a laser beam with IR and UV wavelengths and pulses of femto- and nano-second duration. Investigation of effectiveness of micromachining with different parameters of laser beams was presented. Quality of surface and edges was estimated by means of an optical microscope and an electron microscope. Studies of surface profiles were performed using a confocal microscope. Results of micromachining were with good accordance with computer modeling.

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