| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 539043 | Microelectronic Engineering | 2014 | 6 Pages |
•A novel sputter with directional beam target (DBT) and Lisitano ECR antenna for Cu seed/barrier is designed and tested.•Deposition characteristics of DBT show superior step coverage with no other significant degradation against planar target.•DBT sidewall uniformity is ±17% for 6:1 aspect ratio trench, which is far better than commercial leading edge sputters.•The uniformity of 300 mm Endura CuBS PVD (SIP EnCoRe II Cu) and INOVA® NExT (HCM® IONX™ XL) are ±45.5% and ±40.3%.•The technology can be scaled through proper ratio of DBT to meet future generation Cu technology.
A noble sputter with radical step coverage improvement using directional beam target technology is presented. Sidewall non-uniformity is ±17% for 6:1 aspect ratio trench, which is a drastic improvement from the compared profiles of 300 mm Endura CuBS PVD (SIP EnCoRe II Cu) ±45.5% and INOVA® NExT (HCM® IONX™ XL) ±40.3% without sacrificing other deposition characteristics. The technology can be scaled through proper ratio of DBT to meet future generation Cu technology. The system is also relatively simple configuration and is a good alternative solution.
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