Article ID Journal Published Year Pages File Type
539112 Microelectronic Engineering 2014 5 Pages PDF
Abstract

•On-wafer poly-Si heater structures for ultra-fast (heating speed ∼20,000 °C/s) local temperature control are demonstrated.•The temperature is measured locally by using diodes as thermometers.•Local temperature changes up to +350 °C are demonstrated; up to 500 °C in combination with a temperature controlled chuck.•Design guidelines are proposed to maximize the power-to-temperature efficiency and the robustness of the heater structure.•The spatial temperature profile in the surrounding of the heater is shown to be well described by the 3D heat equation.

In this technical note we demonstrate poly-Si heaters for electrically-controlled ultra-fast local temperature change of on-wafer test structures. By comparing two different heaters, design guidelines are proposed for optimizing the power-to-temperature conversion and the reliability of the structure. Local temperature changes up to +350 °C are demonstrated, with a remarkable heating speed of ∼20,000 °C/s. The spatial temperature profile around the heating structure is also studied.

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