Light output enhancement of GaN-based light-emitting diodes by maskless surface roughening

•Surface morphologies were roughened without the use of masks.•Surface morphologies were optimized by varying Cl2 concentration.•Surface morphologies were optimized by adjusting RF bias power.•Light output of surface-roughened LEDs was enhanced by 43.2%.

In the present paper, the surface of GaN-based light-emitting diodes (LEDs) was roughened by inductively coupled plasma reactive ion etching (ICP-RIE) system. Without the utilization of etching mask, the roughened surface morphologies were optimized by varying Cl2 concentration in Cl2/BCl3/N2 mixing gas and adjusting RF bias power parameters of the ICP system. There was no obvious degradation of electrical properties of surface-roughened LEDs after the ICP dry etching process. Furthermore, the light output power of surface-roughened LEDs was enhanced by 43.2%, compared with conventional LEDs.

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