| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 539236 | Microelectronic Engineering | 2013 | 4 Pages |
We fabricated a nanothin-NbO2-layer-based Pt/NbO2/Pt stack and investigated its threshold-switching characteristics, which can be attributed to metal–insulator-transition, at the nanoscale. The Pt/NbO2/Pt device exhibited a high degree of stability at temperatures as high as 160 °C as well as excellent scalabilities both in terms of the active device area (diameter ∼ 10 nm) and thickness (∼10 nm). In addition, the device also exhibited uniform switching behavior and high switching speeds (∼22 ns). These characteristics make the device suitable for use as a selection device in high density cross-point type structures for resistive switching memories (ReRAMs).
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► We fabricated a nanothin layer of Pt/NbO2/Pt stack which shows threshold-switching property. ► The Pt/NbO2/Pt device exhibited a high degree of stability at temperatures as high as 160 °C. ► The Pt/NbO2/Pt device showed excellent scalabilities both the active device area and thickness. ► The device also exhibited uniform switching behavior and high switching speeds (∼22 ns). ► These characteristics are suitable for a selection device in cross-point-type ReRAMs.
