| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 539500 | Microelectronic Engineering | 2012 | 4 Pages |
Co films were selectively deposited as Cu capping layers by chemical vapor deposition technique. X-ray fluorescence spectroscopy determined the Co deposition selectivity as a function of the deposition temperature and substrate materials. Co/Cu interfacial property was characterized and revealed no detectable oxygen at the interface. In addition to electrical resistance measurements of the resulted Cu/low-k interconnects, selectivity of the Co deposition process and property of the resulted Co/Cu interface were further confirmed with time-dependent-dielectric-breakdown and electromigration tests.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Co films were selectively deposited as Cu capping layers by a chemical vapor deposition (CVD) technique. ► Compared with Cu/porous-dielectric, the CVD Co process shows higher selectivity between Cu and dense-dielectric. ► Comparable time-dependent-dielectric-breakdown resistance to the control further confirms selectivity of the Co deposition process. ► Electromigration enhancement observed from the selective Co deposition process confirms the Co/Cu interfacial property.
