Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
539560 | Microelectronic Engineering | 2014 | 4 Pages |
•We use the single-spot electron beam strategy with a focused Gaussian beam.•The serial technique is optimized on the JEOL JBX-9500FS 100 keV prototype.•A maximum writing speed of around 30 min/cm2 is found for 200 nm array periods.•The trade-off between high current and large writing field is examined.
Efficient nanoscale patterning of large areas is required for sub-wavelength optics. Here we use the single-spot exposure strategy, where electron beam lithography (EBL) with a focused Gaussian beam is used to define shapes directly. The serial technique is optimized on the JEOL JBX-9500FS 100 keV prototype EBL system for speed and pattern fidelity to a minimum writing time of around 30 min/cm2 for 200 nm periods in 2D lattices. The machine time and feasibility of the method are assessed in terms of the trade-off between high current and large writing field.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slide