Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
539597 | Microelectronic Engineering | 2011 | 6 Pages |
Abstract
Nowadays, FinFET represents a new and promising transistor structure for the aggressive downscaling of the CMOS technology. Typically, the small-signal modeling for FinFET is based on compact models or on equivalent circuit representations. As an alternative to such approaches, a small-signal behavioral model based on artificial neural networks is developed in this paper. Particular attention is devoted to modeling the low-frequency kinks of the scattering parameters, due to the lossy silicon substrate. The model is efficient and accurate, as confirmed by the comparison between measured and simulated microwave behavior.
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Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Zlatica Marinković, Giovanni Crupi, Dominique M.M.-P. Schreurs, Alina Caddemi, Vera Marković,