| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 539678 | Microelectronic Engineering | 2011 | 4 Pages |
Abstract
A method is described in which the tapered features that are inherent to nanoimprint lithography are inverted to allow successful lift-off. A mold of the relief is created by in-filling the imprinted resist with hydrogen silsesquioxane (HSQ) before selectively removing the resist with O2 plasma. Nanoscale etch masks have been created by lift-off from the negative HSQ profile and used to create high-aspect-ratio structures in materials that are hard to plasma etch.
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Authors
Philip A. Shields, Duncan W.E. Allsopp,