A study of virtual lithography process for polymer directed self-assembly

For the feature size scaling down to tens of nanometers, the top-down approaches are getting more severe because the extremely ultra-violet (EUV) technique, the high-index fluid-based immersion ArF lithography, and the double patterning technology (DPT) under development may be cover one or two generations. An alternative technology to extend lithography patterning beyond current resolution limits is to combine the top-down lithography and bottom-up assembly.In this paper, an directed self-assembly lithography process of “bottom-up” block copolymer self-assembly, is modeled and simulated in molecular-scale. Impacts of block polymer components on pattern formation are analyzed and discussed.