Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
539786 | Microelectronic Engineering | 2010 | 4 Pages |
Abstract
In this paper we present a comparative study of two e-Beam Lithography (EBL) processes for Nanoimprinting Lithography (NIL) master mold, i.e. the standard PMMA based EBL Si patterning process and the HSQ process. 20 nm features with minimal sidewall roughness and high uniformity are demonstrated on large surface by using HSQ process. Moreover, to validate this ultra-high resolution HSQ EBL process and to check NIL resolution performances, soft UV-NIL replications were performed using soft hard-PDMS/PDMS bi-layer stamps casted on the HSQ master mold. We demonstrate the replication of sub-20 nm nanodots of high density (pitch 60 nm) with a good uniformity on the whole field area.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Andrea Cattoni, E. Cambril, D. Decanini, G. Faini, A.M. Haghiri-Gosnet,