| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 539853 | Microelectronic Engineering | 2010 | 7 Pages |
Abstract
In this paper we discuss some major aspects on the physics of the phase transition from the amorphous to the face-centered-cubic (fcc) polycrystal in Ge2Sb2Te5 at low temperature. We follow the phase transformation by using structural techniques such as TEM, XRD, and electrical resistivity measurements by using the 4-point-probe technique. The results are interpreted in the framework of a quantitative model.
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Authors
S. Lombardo, E. Rimini, M.G. Grimaldi, S. Privitera,