| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 539860 | Microelectronic Engineering | 2010 | 4 Pages |
Abstract
New porous ULK materials are now required for maintaining a constant RC factor as back-end dimensions shrink for each new technology node. Porous SiOCH ULK HF characterization, dedicated to the 32 nm node, has been performed, and its complex permittivity extracted up to 8 GHz. The impact of process integration on the porous SiOCH is highlighted, by an increase of its real permittivity and unwanted losses.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
B. Blampey, M. Gallitre, A. Farcy, T. Lacrevaz, S. De Rivaz, C. Bermond, B. Fléchet, V. Jousseaume, A. Zenasni, P. Ancey,