| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 539872 | Microelectronic Engineering | 2010 | 4 Pages |
Abstract
Electroless deposited NiP and NiCoP thin films were studied for their diffusion barrier properties for copper wiring in ultra-large scale integration (ULSI) technology. The thermal stability of the Si/NiP/Cu and Si/NiCoP/Cu structures was evaluated by X-ray diffractometer (XRD), four probe method and field emission-scanning electron microscope (FE-SEM). Results indicated that both structures, i.e. Si/NiP/Cu and Si/NiCoP/Cu are thermally stable up to 500 °C. Further annealing results in formation of various silicided phases.
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Authors
Anuj Kumar, Mukesh Kumar, Dinesh Kumar,