Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
539894 | Microelectronic Engineering | 2010 | 5 Pages |
Abstract
3D integration including Through Silicon Vias is more and more considered as the solution to overcome conventional 2D IC issues. In this way, TSV analytical equivalent models are hardly required to achieve 3D products and to make design recommendations. In this paper, a 3D process flow is detailed and used to integrate specific RF structures including copper-filled TSVs with 3 μm wide and 15 μm deep dimensions. Both measurements and simulations of these structures lead to the extraction of frequency-dependent parameters and the building of a SPICE compatible π-shaped analytical parametrical model of the TSV.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
L. Cadix, C. Bermond, C. Fuchs, A. Farcy, P. Leduc, L. DiCioccio, M. Assous, M. Rousseau, F. Lorut, L.L. Chapelon, B. Flechet, N. Sillon, P. Ancey,