Investigation of the delamination mechanism of the thin film dielectric structure in flip chip packages

As the electronics industry continues its efforts in miniaturizing the integrated circuit (IC), an IC chip with copper/low-k stacked Back End of Line (BEoL) structures has been developed for reducing R–C delay in order to obtain high-speed signal communication. However, its reliability might become a concern owing to the considerably lower adhesive strength, as well as the greater coefficient of thermal expansion (CTE) of the low-k materials. In this paper, the global–local finite element method, specified boundary condition (SBC) method, is employed as a bridge to estimate the impact from package level to the deep submicron BEoL structure of the flip chip package. The results show that the defect in the stacking structure at the center of the silicon has a lower tendency to crack than that at the corner region. In addition, the higher underfill CTE shows the disadvantage of the defect.