Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
539896 | Microelectronic Engineering | 2010 | 4 Pages |
Abstract
The behaviour of aluminium during anhydrous hydrofluoric acid (HF) vapour etching of silicon dioxide films deposited by different methods was studied. Silicon dioxide films were grown by plasma-enhanced chemical vapour deposition (PECVD), low-pressure chemical vapour deposition (LPCVD), and a thermally oxidizing method. The etch rate of different oxides varies a lot. Etching of PECVD oxide causes residues on the aluminium surface as LPCVD and thermal oxide do not. The origin of the residues and different preventative methods are proposed.
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Authors
Heini Ritala, Jyrki Kiihamäki, Mikko Heikkilä,