Dependence of electrical properties on interfacial layer of Ta2O5 films

The change in the thickness and chemical states of the interfacial layer and the related electrical properties in Ta2O5 films with different annealing temperatures were investigated. The high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the 700 °C-annealed Ta2O5 film remained to be amorphous and had the thinnest interfacial layer which was caused by Ta-silicate decomposition to Ta2O5 and SiO2. In addition, the electrical properties were improved after annealing treatments. Our results suggest that an annealing treatment at 700 °C results in the highest capacitance and the lowest leakage current in Ta2O5 films due to the thinnest interfacial layer and non-crystallization.