Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
540038 | Microelectronic Engineering | 2007 | 6 Pages |
Abstract
We demonstrate a prototype of the near-field lithography system, which is a potential tool for low cost nano-fabrication. Resist patterns with 50 nm features are fabricated on the entire surface of a 4-in. silicon wafer by step and repeat exposure using a light source operating at 365 nm. Furthermore, we realize ultra-clean environment by facilitating a dual clean system. Finally, we fabricate dot and hole arrays, which are indispensable patterns for novel nano-devices, demonstrating the applicability of our system to various applications.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Yasuhisa Inao, Shinji Nakasato, Ryo Kuroda, Motoichi Ohtsu,