Tilt-corrected stitching for electron beam lithography

This paper demonstrates significant improvements in the stitching performance of an electron beam lithography tool by correcting for wafer tilt. This is achieved with no significant increase in writing time. Wafer tilt gives rise to keystone errors in the writing field and even for modest tilts the stitching error can increase significantly. By applying suitable corrections to the main field the maximum stitching error was reduced from 34 to 12 nm for a wafer tilt of 2 mrad.