Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
540059 | Microelectronic Engineering | 2007 | 4 Pages |
The possibility of forming very fine pits or dots with a bit pitch (BP) and a track pitch (TP) of 25 nm was investigated using a conventional electron-beam (EB) writing system and positive and negative EB resists ZEP520 and calixarene, respectively. In our experiments, we obtained very small dots with a diameter of around 13 nm, and ultrahigh-density dot arrays with a BP and a TP of 25 nm using calixarene resist. Calixarene resist is very suitable for the formation of ultrahigh-packed dot array patterns, and promises to open the way toward 1 trillion bits/in2 storage. We believe that calixarene is more suitable for ultrahigh-density pattern formation than ZEP520 because of its exposure intensity distribution function and its resist structure.