Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
540085 | Microelectronic Engineering | 2007 | 4 Pages |
Abstract
Three-dimensional (3D) resolution of inorganic resist pattern, which was exposed with control of acceleration voltage electron beam lithography (CAV-EBL) in low accelerating voltage was examined. The system can make features with varying developed-depths. Three-dimensional pattern with a few hundred nanometer linewidth was fabricated with a CAV-EBL. The pattern depths on inorganic resist were gradated with 5 nm depth-resolution per 30 V. By controlling the pattern depth, a seven stairs blade-shaped binary optics mold was fabricated, and then a replica pattern of the mold was made by using UV-NIL.
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Authors
Yoshiaki Ishii, Jun Taniguchi,