| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 540110 | Microelectronic Engineering | 2007 | 4 Pages |
Abstract
This paper will focus on the process impact of the intentional change in the mask writing grid. Grids ranging from 1 nm to 4 nm (defined at mask level) were used to investigate the effect on test structures in critical locations. The impact on optical proximity correction (OPC) to control line end pull back, corner rounding and general image fidelity will be investigated on >1 numerical aperture (NA) immersion imaging system.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Jan Pieter Kuijten, Will Conley, Arjan Verhappen, Martin Chaplin, Paul van der Vleuten, Stephan van der Goor, Lloyd Litt, Bryan Kasprowicz,