| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 540116 | Microelectronic Engineering | 2007 | 4 Pages |
Abstract
The benefits of supercritical resist drying (SRD) technique using carbon dioxide (CO2) are investigated with respect to the resolution of dense patterns and the aspect ratio (AR) of nano-structures in rather thick HSQ layers. For double lines separated by a distance of 50 nm the maximum achievable AR is trebled using SRD processes compared to conventional nitrogen blow. The mechanical stability of resist structures is significantly improved by using SRD.
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Authors
T. Wahlbrink, D. Küpper, J. Bolten, M. Möller, M.C. Lemme, H. Kurz,