LER evaluation of molecular resist for EUV lithography

We have designed and synthesized a molecular resist material, which has no distribution of the protecting groups and have evaluated its performance as a molecular resist with EB and EUV exposure tool. The molecular resist attained a resolution of sub-45 nm patterning at an exposure dose of 12 mJ/cm2. It was found that controlling the distribution of the protecting groups in a molecular resist material has a great impact on improving line edge roughness (LER). Low LER values of 3.1 nm (inspection length: L = 620 nm) and 3.6 nm (L = 2000 nm) were achieved with this molecular resist using Extreme UltraViolet (EUV) lithography tool.