Fabrication and mechanism of high performance bipolar resistive switching device based on SrTiO3/NiO stacked heterostructure

This paper reports the bipolar resistive switching effect in a SrTiO3/NiO stacked heterostructure which was epitaxially deposited on an Nb doped SrTiO3 substrate by pulsed laser deposition. This heterostructure shows high resistive switching ratio of over 104 at the read voltage of −0.5 V and an expected retention ability of ten years, which is better than that of NiO-based device. Moreover, the resistive switching ratio can be adjusted by changing the maximum applied voltage or compliance current, which shows promising for multilevel nonvolatile memories application. Meanwhile, these results have been discussed by carrier injection-trapped/detrapped process.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► SrTiO3/NiO stacked heterostructure was epitaxially grown by pulsed laser deposition. ► High performance bipolar resistive switching was demonstrated in the heterostructure. ► High resistive switching ratio of over 104 and high retention ability was obtained. ► Adjustable resistive switching shows promising for multilevel memories application. ► Excellent properties was attributed to carrier injection-trapped/detrapped process.