Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
540213 | Microelectronic Engineering | 2006 | 4 Pages |
Abstract
Homoepitaxy of 4H-SiC grown by a horizontal hot-wall chemical vapor deposition and the minority carrier diffusion length were studied. With the addition of HCl during the etching and the epitaxy, an optimum growth window on the (0001¯) C face became wide. Minority carrier diffusion length in SiC epilayers was evaluated by a line-scanning electron-beam-induced current method.
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Authors
T. Hatayama, H. Yano, Y. Uraoka, T. Fuyuki,