| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 540235 | Microelectronic Engineering | 2006 | 11 Pages |
Abstract
The recent progress in the development of high-voltage SiC and GaN power switching devices is reviewed. The experimental performance of various rectifiers and transistors, which have been demonstrated, is discussed. Material and processing challenges and reliability concerns on SiC and GaN power devices are also described. The future trends in device development and commercialization are pointed out.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
T. Paul Chow,