Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
540248 | Microelectronic Engineering | 2006 | 5 Pages |
Abstract
The significant progress made over the past few years placed Silicon Carbide (SiC) power devices in a position to competitively challenge the existing standard Si solutions. This paper reviews the current trends regarding SiC junction-controlled devices and discusses the different approaches one may decide on when considering SiC junction field effect transistors (JFETs) for high power, high temperature applications.
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Physical Sciences and Engineering
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Hardware and Architecture
Authors
A.-P. Mihaila, F. Udrea, S.J. Rashid, Y. Takeuchi, M. Kataoka, R.K. Malhan,