Article ID Journal Published Year Pages File Type
540248 Microelectronic Engineering 2006 5 Pages PDF
Abstract

The significant progress made over the past few years placed Silicon Carbide (SiC) power devices in a position to competitively challenge the existing standard Si solutions. This paper reviews the current trends regarding SiC junction-controlled devices and discusses the different approaches one may decide on when considering SiC junction field effect transistors (JFETs) for high power, high temperature applications.

Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Authors
, , , , , ,