| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 540251 | Microelectronic Engineering | 2006 | 4 Pages |
Abstract
A SiC light-activated Darlington heterojunction transistor is proposed for anti-EMI (electromagnetic interference) applications, in which a monolithically integrated SiCGe/SiC pn heterojunction photodiode is employed to produce a light-induced base current for triggering the transistor. Performance of the proposed light-activated power switch was simulated using MEDICI tools. Feasibility of the proposal is confirmed by its good light-activation characteristics obtained from the simulation. The simulation also demonstrates that good I–V characteristics with a light-independent turn-on voltage knee of about 5 V may be achievable to the light-activated power switch has.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Z.M. Chen, H.B. Pu, Z. Lü, P. Ren,