Effects of dry oxidation of heavily doped p-type Si on output and transfer characteristics in organic thin film transistors

This paper presents an analysis of the effect of the SiO2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► A SiO2 layer was grown on the heavily doped p-type Si using a dry oxidation process. ► The effect of an O2 gas flow on the quality of thermally growing SiO2 was examined. ► A low O2 gas flow led to the formation of the intermediate oxygen deficient oxide. ► The significant gate leakage is the major source of the drain offset.