Minimizing variation in the electrical characteristics of gate-all-around thin film transistors through the use of multiple-channel nanowire and NH3 plasma treatment

In this paper we describe the electrical performance of gate-all-around (GAA) thin-film transistors (TFTs) featuring poly-Si multiple-channel nanowires (NWs). To minimize the variations in the electrical characteristics of GAA NW TFTs, we compared the effects of several approach, including the use of a multiple-gate structure, the number of multiple channels, and NH3 plasma treatment. We demonstrated not only the gate configuration but also the presence of multiple channels efficiently reduced the variation in the electrical characteristics. Finally, NH3 plasma treatment of the GAA NW TFTs featuring multiple channels further decreased the electrical variations because it decreased the trap density, which modulated device performance.

Graphical abstractTransfer characteristics of GAA NW TFTs with (a) 2 and (b) 16 channels, with and without NH3 plasma treatment.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► This paper featured multiple gate and channels to minimize the electrical variation. ► Multiple gate structure affected both the mean values and standard deviations of the performance. ► Increasing the number of channels also effectively minimize the electrical variations. ► Furthermore, we subjected NH3 plasma treatment to further improve the device performance.