Article ID Journal Published Year Pages File Type
540417 Microelectronic Engineering 2011 4 Pages PDF
Abstract

An extreme ultraviolet (EUV) interference lithographic exposure tool was installed at the long undulator beamline in NewSUBARU to evaluate EUV resists for 25 nm node and below. The two-window transmission grating of 40 and 50 nm half pitch (hp) were fabricated with techniques of spattering, electron beam lithography, dry etching and wet etching. hp patterns (20 and 25 nm) of chemically amplified resist (CAR) and non-CAR were successfully replicated using the EUV interference lithographic exposure tool.

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