| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 540461 | Microelectronic Engineering | 2011 | 6 Pages |
A survey of non-volatile and highly scalable cross-point memory in nanoscale resistive switching device is introduced. We present the basic operation of bipolar switching memory using combination between switching layer (HfOx/PCMO) and oxygen reservoir layer (ZrOx/AlOx) and discuss the crucial issue for cross-point ReRAM. Based on the results, the applications of cross-point structure without any selection device were introduced. To evaluate the feasibility of cross-point ReRAM, read-out margin was calculated using PSPICE simulation. In addition, by the device scaling, three phenomena can be confirmed: (1) reset current reduction, (2) local heating effect and (3) significant improvement of uniformity.
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