Filament diffusion model for simulating reset and retention processes in RRAM

Resistive switching memory (RRAM) devices are attracting an increasing interest as a possible future technology for ultra-scaled, high-density nonvolatile/dynamic memory. Although the RRAM concept is promising from the integration and scaling viewpoints, the switching mechanism and its controllability are still under debate. This paper addresses the modeling of reset and retention processes in unipolar resistive-switching memory devices. Reset transition and data loss are described in terms of the dissolution of a conductive filament, which is modeled by thermally-activated diffusion of defects/dopants. Carrier transport, Joule heating and diffusion of oxygen ions/vacancies during the electrical pulse and/or the annealing are modeled within a 3D numerical solver. The model can account for the observed dependence of reset voltage on the width of the applied triangular pulse and on the initial resistance for NiO-based RRAM devices. Retention simulations as a function of annealing temperature also agree with available data. The model provides a first example of device simulation tool for the design and the exploration of scaling and performance of RRAM cells.

Graphical abstractReset transition and data loss are described in terms of the dissolution of a conductive filament, which is modeled by thermally-activated diffusion of defects/dopants.Figure optionsDownload full-size imageDownload as PowerPoint slideResearch highlights► Further RRAM development requires understanding of the switching mechanisms. ► Physics based numerical model for reset and retention in unipolar RRAM is presented. ► Model accounts for Vreset dependence on ramp speed and initial resistance.