| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 540466 | Microelectronic Engineering | 2011 | 4 Pages |
We investigated the resistive switching characteristics of Ir/TiOx/TiN structure with 50 nm active area. We successfully formed ultra-thin (4 nm) TiOx active layer using oxidation process of TiN BE, which was confirmed by X-ray Photoelectron Spectroscopy (XPS) depth profiling. Compared to large area device (50 μm), which shows only ohmic behavior, 250 and 50 nm devices show very stable resistive switching characteristics. Due to the formation and rupture of oxygen vacancies induced conductive filament at Ir and TiOx interface, bipolar resistive switching was occurred. We obtained excellent switching endurance up to 106 times with 100 ns pulse and negligible degradation of each resistance state at 85 °C up to 104 s.
Graphical abstractThe resistive switching characteristics of Ir/4nm-TiOx/TiN structure with 50 nm active area was investigated. By oxidation process of TiN BE, we successfully obtained ultra-thin (4 nm) TiOx active layer. Compared to the large scale device (50 μm), which shows only ohmic behavior, nano-scale device (250, 50 nm) device show very stable resistive switching operation.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Resistive switching characteristics of Ir/4nm-TiOx/TiN structure. ► Ultra-thin TiOx by oxidation process. ► Resistive switching behavior by the formation and rupture of oxygen vacancies induced metallic filament.
