Epitaxy of BaTiO3 thin film on Si(0 0 1) using a SrTiO3 buffer layer for non-volatile memory application

In this study we report the epitaxial growth of BaTiO3 films on Si(0 0 1) substrate buffered by 5 nm-thick SrTiO3 layer using both MBE and PLD techniques. The BaTiO3 films demonstrate single crystalline, (0 0 1)-oriented texture and atomically flat surface on SrTiO3/Si template. The electrical characterizations of the BaTiO3 films using MFIS structures show that samples grown by MBE with limited oxygen pressure during the growth exhibit typical dielectric behavior despite post deposition annealing process employed. A ferroelectric BaTiO3 layer is obtained using PLD method, which permits much higher oxygen pressure. The C–V curve shows a memory window of 0.75 V which thus enable BaTiO3 possibly being applied to the non-volatile memory application.

Graphical abstract(0 0 1)-oriented single crystalline BaTiO3 thin films were prepared on SrTiO3- buffered Si(0 0 1) substrate. The C–V curve of the MFIS structure based on BTO films shows a memory window of 0.75V which enable BTO possible being applied to non-volatile memory application.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► BTO/STO/Si by MBE and PLD. ► (0 0 1)-oriented single crystalline BTO with a flat surface ► 0.75V memory window of C–V curve.